TSZ181H datasheet(8/26 Pages) STMICROELECTRONICS

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Table 5. Electrical characteristics (VCC+ = 5 V, VCC- = 0 V, Vicm=VCC/2, T = 25 °C, RL=10 kΩ connected to

VCC/2, unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

VIO

Input offset voltage

T = 25 °C

µV

Tmin < T < Tmax

|∆VIO/∆T| Input offset voltage drift(1)

Tmin < T < Tmax

0.15

µV/°C

IIB

Input bias current (2) (VOUT=VCC/2)

T = 25 °C

200

Tmin < T < Tmax

400

IIO

Input offset current (2) (VOUT=VCC/2)

T = 25 °C

400

Tmin < T < Tmax

600

CMR1

Common-mode rejection ratio(3),

Vic=0 V to VCC, VOUT =VCC/2, RL>1 MΩ

T = 25 °C

108

126

Tmin < T < Tmax

106

CMR2

Common-mode rejection ratio(3),

Vic=0 V to VCC , VOUT =VCC/2, RL>1 MΩ

T = 25 °C,

Vic = 0 to VCC-1.8 V

112

136

Tmin < T < Tmax,

Vic = 0 to VCC-2 V

110

SVR1

Supply voltage rejection ratio

VCC=2.2 to 5.5 V, Vic=0 V, RL>1 MΩ

T = 25 °C

105

123

Tmin < T < Tmax

104

Avd

Large signal voltage gain,

VOUT =0.5 V to (VCC - 0.5 V)

T=25 °C

120

144

Tmin < T < Tmax

110

EMIRR

EMI rejection ratio(5)

VRF=100 mVp, f=400 MHz

VRF=100 mVp, f=900 MHz

VRF=100 mVp, f=1800 MHz

VRF=100 mVp, f=2400 MHz

VOH

High-level output voltage,

VOH = VCC - VOUT

T=25 °C

Tmin < T < Tmax

VOL

Low-level output voltage

T = 25 °C

Tmin < T < Tmax

IOUT

Isink (VOUT = VCC)

T = 25 °C

Tmin < T < Tmax

Isource (VOUT =0 V)

T = 25 °C

Tmin < T < Tmax

ICC

Supply current per channel,

VOUT = VCC/2, RL>1 MΩ

T = 25 °C

0.8

Tmin < T < Tmax

1.2

AC performance

GBP

Gain bandwidth product,

RL=10 kΩ, CL=100 pF

T=25 °C

MHz

Tmin < T < Tmax

1.5

Φm

Phase margin

RL=10 kΩ, CL=100 pF

Degrees

Gain margin

Slew rate(6)

T=25 °C

2.9

4.7

V/µs

TSZ181H, TSZ182H

Electrical characteristics

DS13229 - Rev 2

page 8/26

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