TSZ181H datasheet(4/26 Pages) STMICROELECTRONICS

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Electrical characteristics

Table 3. Electrical characteristics (VCC+ = 2.2 V, VCC- = 0 V, Vicm = VCC/2, T = 25 °C, RL=10 kΩ connected to

VCC/2, unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

VIO

Input offset voltage

T=25 °C

3.5

µV

Tmin < T < Tmax

|∆VIO/∆T| Input offset voltage drift(1)

Tmin < T < Tmax

0.15

µV/°C

IIB

Input bias current(2)(VOUT=VCC/2)

T = 25 °C

200

Tmin < T < Tmax

400

IIO

Input offset current(2) (VOUT=VCC/2)

T = 25 °C

400

Tmin < T < Tmax

600

CMR1

Common-mode rejection ratio(3),

Vic = 0 V to VCC, VOUT =VCC/2, RL>1 MΩ

T = 25 °C

115

Tmin < T < Tmax

Avd

Large signal voltage gain,

VOUT =0.5 V to (VCC - 0.5 V)

T=25 °C

112

130

Tmin < T < Tmax

VOH

High-level output voltage,

VOH = VCC - VOUT

T=25 °C

Tmin < T < Tmax

VOL

Low-level output voltage

T = 25 °C

Tmin < T < Tmax

IOUT

Isink (VOUT = VCC)

T = 25 °C

Tmin < T < Tmax

2.37

Isource (VOUT =0 V)

T = 25 °C

3.5

Tmin < T < Tmax

1.9

ICC

Supply current per channel,

VOUT = VCC/2, RL>1 MΩ

T = 25 °C

0.7

Tmin < T < Tmax

1.2

AC performance

GBP

Gain bandwidth product,

RL = 10 kΩ, CL = 100 pF

T = 25 °C

1.6

2.3

MHz

Tmin < T < Tmax

1.1

Φm

Phase margin

RL = 10 kΩ, CL=100 pF

degrees

Gain margin

Slew rate (4)

T=25 °C

4.6

V/µs

Tmin < T < Tmax

2.5

Settling time

To 0.1%, Vin = 0.8 Vpp

500

Equivalent input noise voltage density

f = 1 kHz

nV/√Hz

f =10 kHz

en-pp

Voltage noise

f = 0.1 to 10 Hz

0.6

µVpp

Channel separation

f = 1 kHz

120

TSZ181H, TSZ182H

Electrical characteristics

DS13229 - Rev 2

page 4/26

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