MPC5602PEF0MLL4R datasheet(42/95 Pages) NXP

42 / 95 page

MPC5602P Microcontroller Data Sheet, Rev. 6

Freescale Semiconductor

3.6

Electromagnetic interference (EMI) characteristics

3.7

Electrostatic discharge (ESD) characteristics

3.8

Power management electrical characteristics

3.8.1

Voltage regulator electrical characteristics

The internal voltage regulator requires an external NPN ballast, approved ballast list availbale in Table 13, to be connected as

shown in Figure 8. Capacitances should be placed on the board as near as possible to the associated pins. Care should also be

taken to limit the serial inductance of the VDD_HV_REG, BCTRL and VDD_LV_CORx pins to less than LReg. (refer to Table 14).

Table 11. EMI testing specifications

Symbol

Parameter

Conditions

Clocks

Frequency

Level

(Typ)

Unit

VEME Radiated emissions VDD =5.0 V; TA =25°C

Other device configuration,

test conditions and EM testing

per standard IEC61967-2

fOSC =8MHz

fCPU =64MHz

No PLL frequency

modulation

150 kHz–150 MHz

dBµV

150–1000 MHz

IEC level

—

fOSC =8MHz

fCPU =64MHz

±4% PLL frequency

modulation

150 kHz–150 MHz

dBµV

150–1000 MHz

IEC level

—

VDD =3.3 V; TA =25°C

Other device configuration,

test conditions and EM testing

per standard IEC61967-2

fOSC =8MHz

fCPU =64MHz

No PLL frequency

modulation

150 kHz–150 MHz

dBµV

150–1000 MHz

IEC level

—

fOSC =8MHz

fCPU =64MHz

±4% PLL frequency

modulation

150 kHz–150 MHz

dBµV

150–1000 MHz

IEC level

—

Table 12. ESD ratings1,2

1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated

Circuits.

2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device

specification requirements. Complete DC parametric and functional testing shall be performed per applicable

device specification at room temperature followed by hot temperature, unless specified otherwise in the device

specification.

Symbol

Parameter

Conditions

Value

Unit

VESD(HBM)

SR Electrostatic discharge (Human Body Model)

—

2000

VESD(CDM)

SR Electrostatic discharge (Charged Device Model)

—

750 (corners)

500 (other)

MPC5602PEF0MLL4R Datasheet(PDF) 42 Page - NXP Semiconductors

MPC5602PEF0MLL4R Datasheet(HTML) 42 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95

Datasheet Download

Link URL