LM6003 datasheet(2/6 Pages) LEIDITECH

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Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

1.3

2.0

VGS=10V, ID=3A

105

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=3A

125

mΩ

Forward Transconductance

gFS

VDS=15V,ID=2A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

247

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=30V,VGS=0V,

F=1.0MHz

19.5

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=30V,ID=1.5A

VGS=10V,RGEN=1Ω

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=30V,ID=3A,

VGS=4.5V

1.3

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=3A

1.2

Diode Forward Current

(Note 2)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

Rev :

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01.06.2014

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LM6003

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