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LM6003 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM6003 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  Description The LM6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery switch ● DC/DC converter D G S Schematic Diagram Marking and Pin Assignment SOT-23 Top View Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 6003 LM6003 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A Drain Current-Pulsed (Note 1) IDM 10 A Maximum Power Dissipation PD 1.7 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 73.5 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 65 - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Enhancement Mode Power MOSFET LM6003 Rev : www.leiditech.com 01.06.2014 1/6 Rev : www.leiditech.com 01.06.2014 1/6 N-Channel |
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