1.

Electrical Specifications

The following sections show the electrical specifications of the MSCSM70HM038CAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM70HM038CAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

700

V

Continuous drain current

464

A

369

Pulsed drain current

900

Gate-Source voltage

–10/25

V

Drain-Source ON resistance

4.8

mΩ

Power dissipation

1277

W

The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM70HM038CAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Zero gate voltage

drain current

—

—

400

µA

Drain-Source on

resistance

—

3.8

4.8

mΩ

—

4.8

—

Gate threshold

voltage

1.9

2.4

—

V

Gate-Source

leakage current

—

—

400

nA

MSCSM70HM038CAG

Electrical Specifications

Datasheet

DS00003928A-page 3