The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM70HM038CAG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input capacitance

f = 1 MHz

—

18

—

nF

Output capacitance

—

2

—

Reverse transfer

capacitance

—

0.11

—

Total gate charge

—

860

—

nC

Gate-source charge

—

232

—

Gate-drain charge

—

140

—

Turn-on delay time

—

78

—

ns

Rise time

—

125

—

Turn-off delay time

—

214

—

Fall time

92

—

Turn-on energy

4.1

—

mJ

Turn-off energy

7

—

mJ

Internal gate resistance

—

1.4

—

Ω

Junction-to-case thermal resistance

—

—

0.117

°C/W

The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the MSCSM70HM038CAG

device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Diode forward voltage

—

3.4

—

V

—

3.8

—

Reverse recovery time

—

40

—

ns

Reverse recovery charge

—

2

—

µC

Reverse recovery current

—

76

—

A

MSCSM70HM038CAG

Electrical Specifications

Datasheet

DS00003928A-page 4