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STM32H750VB Datasheet(PDF) 106 Page - STMicroelectronics

Part # STM32H750VB
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, 128 Kbyte Flash, 1 Mbyte RAM, 46 com. and analog interfaces, crypto
PDF  335 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H750VB Datasheet(HTML) 106 Page - STMicroelectronics

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Electrical characteristics (rev Y)
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
106/334
DS12556 Rev 5
Table 34. Typical and maximum current consumption in Stop mode, regulator ON
Symbol
Parameter
Conditions
Typ
Max(1)
unit
TJ =
25°C
TJ =
85°C
TJ =
105°C
TJ =
125°C
IDD(Stop)
D1Stop,
D2Stop,
D3Stop
Flash
memory in
low-power
mode, no
IWDG
SVOS5
1.4
7.2(2)
49
75(2)
140
mA
SVOS4
1.95
11
66
110
200
SVOS3
2.85
16(2)
91
150(2)
240
Flash
memory ON,
no IWDG
SVOS5
1.65
7.2
49
75
140
SVOS4
2.2
11
66
110
180
SVOS3
3.15
16
91
150
300
D1Stop,
D2Standby,
D3Stop
Flash
memory
OFF, no
IWDG
SVOS5
0.99
5.1
35
60
97
SVOS4
1.4
7.5
47
79
130
SVOS3
2.05
12
64
110
170
Flash
memory ON,
no IWDG
SVOS5
1.25
5.5
35
61
98
SVOS4
1.65
7.8
47
80
130
SVOS3
2.3
12
65
110
170
D1Standby,
D2Stop,
D3Stop
Flash OFF,
no IWDG
SVOS5
0.57
3
21
36
57
SVOS4
0.805
4.5
27
47
74
SVOS3
1.2
6.7
37
63
99
D1Standby,
D2Standby,
D3Stop
SVOS5
0.17
1.1(2)
813(2)
20
SVOS4
0.245
1.5
11
17
26
SVOS3
0.405
2.4(2)
15
23(2)
35
1. Guaranteed by characterization results.
2. Guaranteed by test in production.
Table 35. Typical and maximum current consumption in Standby mode
Symbol
Parameter
Conditions
Typ(3)
Max (3 V)(1)
Unit
Backup
SRAM
RTC
& LSE
1.62 V 2.4 V
3 V
3.3 V
TJ =
25°C
TJ =
85°C
TJ =
105°C
TJ =
125°C
IDD
(Standby)
Supply
current in
Standby
mode
OFF
OFF
1.8
1.9
1.95
2.05
4(2)
18(3)
40(2)
90(3)
µA
ON
OFF
3.4
3.4
3.5
3.7
8.2(3)
47(3)
83(3)
141(3)
OFF
ON
2.4
3.5
3.86
4.12
-
-
-
-
ON
ON
3.95
5.1
5.46
5.97
-
-
-
-
1. The maximum current consumption values are given for PDR OFF (internal reset OFF). When the PDR is OFF (internal
reset OFF), the current consumption is reduced by 1.2 µA compared to PDR ON.
2. Guaranteed by test in production.
3. Guaranteed by characterization results.



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