2SA9150 datasheet(2/6 Pages) FUTUREWAFER

2 / 6 page

PNP Medium Power Transistors

2SA9150

Document Number:F51935T

27-Nov-2021 V 2.0

www.futurewafer.com.tw

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

BV CBO

IC = -100uA,IE = 0

-150

Collector-Emitter Breakdown Voltage

BV CEO

IC = -30mA,IB = 0

-150

Emitter-Base Breakdown Voltage

BV EBO

IE = -100uA,IC = 0

-7.0

Collector-Emitter Saturation Voltage

V CE(sat)

IC = -8.0A,IB = -0.8A

-1.0

Collector Cut-off Current

I CBO

VCB = -135V,IE = 0

-1.0

Emitter Cut-off Current

I EBO

VEB = -10V,IC = 0

-1.0

Static Forward Current Transfer Ratio

h FE

IC = -1.0A,VCE = -5V

250

Transition Frequency

f T

IC = -1.0A,VCE = -5.0V

MHZ

Output Capacitance

C obo

VCB = -80V,f = 1MHZ

Turn-on time

t on

IC = -5A

IB1 = -IB2 = -0.5A,

VCC = -60V,RL = 12Ω

0.2

Storage time

t s

1.4

Fall time

t f

0.35

5. Electrical Characteristics(@ T

A = 25°C,unless otherwise specified)

6. Ratings and Characteristics Curve (TA=25°C unless otherwise noted)

-IB,Base Current (A)

Fig 1.VCE(SAT) VS Base Current

IC = -5A

IC = -8A

-VCE,Collector Emitter Voltage (V)

-400mA

-300mA

-200mA

-160mA

-120mA

-80mA

-40mA

IB = -20mA

Fig 2.Typical Collector Current VS

Collector Emitter Voltage

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