| Electronic Components Datasheet Search |
|
BAS40WD Datasheet(PDF) 3 Page - FutureWafer Tech Co.,Ltd |
|
|
|||||||||||||||||||||||||||||
BAS40WD Datasheet(HTML) 3 Page - FutureWafer Tech Co.,Ltd |
|
3 / 11 page ![]() BAS40WD Series Surface Mount Switching Diode 3 Document No.: F21837W 30-DEC-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 Parameter Symbol Condition Min. Typ. Units Max. Reverse Breakdown Voltage V BR I R = 10uA 40 - V - Forward Voltage V F I F = 1mA - - 0.38 I F = 200mA - - 1.0 Reverse Recovery Time t rr I F = I T = 10mA, I rr = 1mA, R L = 100Ω - - nS 5.0 Reverse Leakage Current I R V R = 30V, T J = 25°C - 20 nA 100 Junction Capacitance C I/O Pin Capacitance to GND. V dc = 0V, f = 1MHZ - 4.0 pF 5.0 3-1. Electrical Characteristics 3. Electrical Property 3-2. Ratings and Characteristics Curve (TA=25°C unless otherwise noted) Fig 1. Typical Forward Characteristics Forward Voltage, V F (V) Fig 3. Typical Junction Capacitance Fig 4. Power Derating Curve Case Temperature, T C (°C) Reverse Voltage, V R (V) Fig 2. Reverse Current Reverse Voltage, V R (V) T A = 25°C T A = 75°C T A = 125°C |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |