BAS70 datasheet(3/18 Pages) FUTUREWAFER

3 / 18 page

Document No.: F21837G

27-DEC-2021 V 2.0

www.futurewafer.com.tw

FQE-001-04

BAS70 Series

Surface Mount Switching Diode

Parameter

Symbol

Condition

Min.

Max.

Units

Reverse Breakdown Voltage

V BR

I R = 10uA

Forward Voltage

V F

I F = 1mA

0.41

I F = 10mA

0.75

I F = 15mA

Reverse Recovery Time

t rr

I F = 10mA, V R = 6V,

I rr = 1mA, R L = 100Ω

5.0

Reverse Leakage Current

I R

V R = 50V, T J = 25°C

Junction Capacitance

C I/O

Pin Capacitance to GND.

V dc = 0V, f = 1MHZ

2.0

Fig 1. Typical Forward Characteristics

Forward Voltage, V F (V)

T A = 125°C

T A = 85°C

T A = 25°C

T A = -40°C

Fig 2. Reverse Current

Percent of Reverse Voltage, V R (%)

T A = 25°C

T A = 85°C

T A = 125°C

Fig 3. Typical Junction Capacitance

Reverse Voltage, V R (V)

Fig 4. Power Derating Curve

Case Temperature, T C (°C)

3-1. Electrical Characteristics

3. Electrical Property

3-2. Ratings and Characteristics Curve (TA=25°C unless otherwise noted)

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