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SST38LF6401ET Datasheet(PDF) 21 Page - Microchip Technology |
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SST38LF6401ET Datasheet(HTML) 21 Page - Microchip Technology |
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21 / 47 page  2020-2022 Microchip Technology Inc. and its subsidiaries DS20006448B-page 21 SST38LF6401ET TABLE 7-4: READ CYCLE TIMING PARAMETERS (VDD = 3V-3.6V) Symbol Parameter Minimum Maximum Unit TRC Read Cycle Time 90 — ns TCE Chip Enable Access Time — 90 ns TAA Address Access Time — 90 ns TPACC(1) Page Access Time — 25 ns TOE Output Enable Access Time — 25 ns TCLZ(1) CE# Low to Active Output 0 — ns TOLZ(1) OE# Low to Active Output 0 — ns TCHZ(1) CE# High to High-Z Output — 20 ns TOHZ(1) OE# High to High-Z Output — 20 ns TOH(1) Output Hold from Address Change 0 — ns TRP(1) RST# Pulse Width 500 — ns TRHR(1) RST# High before Read 50 — ns TRYE(1,2) RST# Pin Low to Read Mode — 20 µs TRY(1) RST# Pin Low to Read Mode – not during Program or Erase Algorithms — 500 ns TRPD(1) RST# Input Low to Standby Mode 20 — µs TRB(1) RY/BY# Output High to CE#/OE# Pin Low 0 — ns Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2: This parameter applies to Sector Erase, Block Erase and Program operations. This parameter does not apply to Chip Erase operations. TABLE 7-5: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter Minimum Maximum Unit TBP Word Program Time — 10 µs TWBP(1) Program Buffer-to-Flash Time — 40 µs TAS Address Setup Time 0 — ns TAH Address Hold Time 30 — ns TCS WE# and CE# Setup Time 0 — ns TCH WE# and CE# Hold Time 0 — ns TOES OE# High Setup Time 0 — ns TOEH OE# High Hold Time 10 — ns TCP CE# Pulse Width 40 — ns TWP WE# Pulse Width 40 — ns TWPH(2) WE# Pulse Width High 30 — ns TCPH(2) CE# Pulse Width High 30 — ns TDS Data Setup Time 30 — ns TDH(2) Data Hold Time 0 — ns TIDA(2) Software ID, Bypass Entry and Exit Times — 150 ns TSE Sector Erase — 25 ms TBE Block Erase — 25 ms TSCE Chip Erase — 50 ms TBUSY CE# High or WE# High to RY/BY# Low 90 — ns Note 1: Effective programming time is 2.5 µs per word if 16 words are programmed during this operation. 2: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. |
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