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STM32G030C6 Datasheet(PDF) 49 Page - STMicroelectronics |
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STM32G030C6 Datasheet(HTML) 49 Page - STMicroelectronics |
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49 / 94 page ![]() DS12991 Rev 4 49/94 STM32G030x6/x8 Electrical characteristics 79 5.3.6 Wakeup time from low-power modes and voltage scaling transition times The wakeup times given in Table 32 are the latency between the event and the execution of the first user instruction. Table 32. Low-power mode wakeup times(1) Symbol Parameter Conditions Typ Max Unit tWUSLEEP Wakeup time from Sleep to Run mode -11 11 CPU cycles tWULPSLEEP Wakeup time from Low-power sleep mode Transiting to Low-power-run-mode execution in Flash memory not powered in Low-power sleep mode; HCLK = HSI16 / 8 = 2 MHz 11 14 tWUSTOP0 Wakeup time from Stop 0 Transiting to Run-mode execution in Flash memory not powered in Stop 0 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 5.6 6 µs Transiting to Run-mode execution in SRAM or in Flash memory powered in Stop 0 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 22.4 tWUSTOP1 Wakeup time from Stop 1 Transiting to Run-mode execution in Flash memory not powered in Stop 1 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 9.0 11.2 µs Transiting to Run-mode execution in SRAM or in Flash memory powered in Stop 1 mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 or Range 2 57.5 Transiting to Low-power-run-mode execution in Flash memory not powered in Stop 1 mode; HCLK = HSI16/8 = 2 MHz; Regulator in low-power mode (LPR = 1 in PWR_CR1) 22 25.3 Transiting to Low-power-run-mode execution in SRAM or in Flash memory powered in Stop 1 mode; HCLK = HSI16 / 8 = 2 MHz; Regulator in low-power mode (LPR = 1 in PWR_CR1) 18 23.5 tWUSTBY Wakeup time from Standby mode Transiting to Run mode; HCLK = HSI16 = 16 MHz; Regulator in Range 1 14.5 30 µs tWULPRUN Wakeup time from Low-power run mode(2) Transiting to Run mode; HSISYS = HSI16/8 = 2 MHz 57 µs 1. Based on characterization results, not tested in production. 2. Time until REGLPF flag is cleared in PWR_SR2. |
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