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STM32G030C6 Datasheet(PDF) 51 Page - STMicroelectronics

Part # STM32G030C6
Description  Arm® Cortex®-M0 32-bit MCU, up to 64 KB Flash, 8 KB RAM, 2x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
PDF  94 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G030C6 Datasheet(HTML) 51 Page - STMicroelectronics

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DS12991 Rev 4
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STM32G030x6/x8
Electrical characteristics
79
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 5.3.14. See
Figure 13 for recommended clock input waveform.
Figure 13. Low-speed external clock source AC timing diagram
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 36. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 35. Low-speed external user clock characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSE_ext User external clock source frequency
-
-
32.768
1000
kHz
VLSEH OSC32_IN input pin high level voltage
-
0.7 VDDIO1
-VDDIO1
V
VLSEL
OSC32_IN input pin low level voltage
-
VSS
-
0.3 VDDIO1
tw(LSEH)
tw(LSEL)
OSC32_IN high or low time
-
250
-
-
ns
1. Guaranteed by design.
MS19215V2
VLSEH
tf(LSE)
90%
10%
TLSE
t
tr(LSE)
VLSEL
tw(LSEH)
tw(LSEL)
Table 36. HSE oscillator characteristics(1)
Symbol
Parameter
Conditions(2)
Min
Typ
Max
Unit
fOSC_IN
Oscillator frequency
-
4
8
48
MHz
RF
Feedback resistor
-
-
200
-
kΩ



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