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STM32WB15CC Datasheet(PDF) 69 Page - STMicroelectronics |
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STM32WB15CC Datasheet(HTML) 69 Page - STMicroelectronics |
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69 / 127 page ![]() DS13258 Rev 4 69/127 STM32WB15CC Electrical characteristics 115 6.3.6 Embedded voltage reference The parameters in Table 30 are derived from tests performed under the ambient temperature and supply voltage conditions summarized in Table 21: General operating conditions. VPVM3 VDDA peripheral voltage monitoring Rising edge 1.61 1.65 1.69 V Falling edge 1.6 1.64 1.68 Vhyst_PVM3 PVM3 hysteresis - - 10 - mV IDD (PVM3)(2) PVM3 consumption from VDD -- 2 - µA 1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes. 2. Specified by design, not tested in production. 3. BOR0 is enabled in all modes (except Shutdown) and its consumption is therefore included in the supply current characteristics tables. Table 29. Embedded reset and power control block characteristics (continued) Symbol Parameter Conditions(1) Min Typ Max Unit Table 30. Embedded internal voltage reference Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TJ < +125 °C 1.182 1.212 1.232 V tS_vrefint (1) ADC sampling time when reading the internal reference voltage -4(2) -- µs tstart_vrefint Start time of reference voltage buffer when ADC is enable -- 8 12(2) IDD(VREFINTBUF) VREFINT buffer consumption from VDD when converted by ADC - - 12.5 20(2) µA ∆VREFINT Internal reference voltage spread over the temperature range VDD = 3 V - 5 7.5(2) mV TCoeff Temperature coefficient –40 °C < TJ < +125 °C - 30 50(2) ppm/°C ACoeff Long term stability 1000 hours, TJ = 25 °C - 300 1000(2) ppm VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V VREFINT_DIV1 1/4 reference voltage - 24 25 26 % VREFINT VREFINT_DIV2 1/2 reference voltage 49 50 51 VREFINT_DIV3 3/4 reference voltage 74 75 76 1. The shortest sampling time can be determined in the application by multiple iterations. 2. Specified by design, not tested in production. |
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