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STM32L151VD-X Datasheet(PDF) 79 Page - STMicroelectronics

Part # STM32L151VD-X
Description  Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3 with 384KB Flash, 80KB SRAM, 16KB EEPROM, LCD, USB, ADC, DAC
PDF  119 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L151VD-X Datasheet(HTML) 79 Page - STMicroelectronics

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STM32L151VD-X STM32L152VD-X
Electrical characteristics
107
Flash memory and data EEPROM
Table 34. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming/ erasing
time for byte / word /
double word / half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
600
-
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 35. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1. Guaranteed by characterization results.
Typ Max
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to
105 °C
10
--
kcycles
Cycling (erase / write)
EEPROM data memory
300
--
tRET(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at TA = 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at TA = 105 °C
TRET = +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
-
-



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