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IRF7MS2907 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7MS2907 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 7 page ![]() IRF7MS2907 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.6 °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 45* ISM Pulse Source Current (Body Diode) ➀ — — 180 VSD Diode Forward Voltage — — 1.0 V Tj = 25°C, IS = 45A, VGS = 0V ➃ trr Reverse Recovery Time — — 175 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 850 nC VDD ≤ 25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A * Current is limited by package Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 75 — — V VGS = 0V, ID = 250µA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.087 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.0055 Ω VGS = 10V, ID = 45A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 70 — — S ( ) VDS > 15V, IDS = 45A ➃ IDSS Zero Gate Voltage Drain Current — — 20 VDS= 75V ,VGS=0V — — 250 VDS = 60V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 375 VGS = 10V, ID = 45A Qgs Gate-to-Source Charge — — 60 nC VDS = 60V Qgd Gate-to-Drain (‘Miller’) Charge — — 150 td(on) Turn-On Delay Time — — 40 VDD = 38V, ID = 45A tr Rise Time — — 135 VGS = 10V, RG = 1..2Ω td(off) Turn-Off Delay Time — — 175 tf Fall Time — — 75 LS + LD Total Inductance — 6.8 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 12060 — VGS = 0V, VDS =25V Coss Output Capacitance — 2280 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 605 — nA ➃ nH ns µA |
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