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TMS28F004ASB80CDCDL Datasheet(PDF) 48 Page - Texas Instruments

Part # TMS28F004ASB80CDCDL
Description  524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  80 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TMS28F004ASB80CDCDL Datasheet(HTML) 48 Page - Texas Instruments

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switching characteristics for TMS28F004AMy and TMS28F400AMy over recommended ranges of supply voltage
(commercial and extended temperature ranges)
read operations
ALT
’28F004AMy 60
’28F400AMy 60
’28F004AMy 70
’28F400AMy 70
28F004AMy 80
’28F400AMy 80
PARAMETER
ALT.
SYMBOL
3.3-V VCC
RANGE
5-V VCC
RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
3.3-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
ta(A)
Access time from A0 – A17
(see Note 15)
tAVQV
110
60
130
70
150
80
ns
ta(E)
Access time from E
tELQV
110
60
130
70
150
80
ns
ta(G)
Access time from G
tGLQV
65
35
80
40
90
40
ns
tc(R)
Cycle time, read
tAVAV
110
60
130
70
150
80
ns
td(E)
Delay time, E low to low-impedance
output
tELQX
0
0
0
0
0
0
ns
td(G)
Delay time, G low to low-impedance
output
tGLQX
0
0
0
0
0
0
ns
tdis(E)
Disable time, E to high-impedance
output
tEHQZ
55
25
70
30
80
30
ns
tdis(G)
Disable time, G to high-impedance
output
tGHQZ
45
25
55
30
60
30
ns
th(D)
Hold time, DQ valid from A0 – A17, E, or
G, whichever occurs first
(see Note 15)
tAXQX
0
0
0
0
0
0
ns
tsu(EB)
Setup time, BYTE from E low
tELFL
tELFH
5
5
5
5
5
5
ns
td(RP)
Output delay time from RP high
tPHQV
800
450
800
450
800
450
ns
tdis(BL)
Disable time, BYTE low to DQ8 – DQ15
in high-impedance state
tFLQZ
45
25
55
30
60
30
ns
ta(BH)
Access time from BYTE going high
tFHQV
110
60
130
70
150
80
ns
NOTE 15: A–1 – A17 for byte-wide



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