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AS4LC2M8S1 Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation

Part # AS4LC2M8S1
Description  3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM
PDF  29 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC2M8S1 Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation

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AS4LC2M8S1
AS4LC1M16S1
5/21/01; v.1.1
Alliance Semiconductor
P. 5 of 29
Mode register fields
† RFU = 0 during MRS cycle.
Burst sequence (burst length = 4)
Burst sequence (burst length = 8)
Register programmed with MRS
Address
A11~A10
A9A8A7
A6
A5
A4A3
A2
A1
A0
Function
RFU†
WBL
TM
CAS
latency
BT
Burst length
Write burst length
Burst type
A9
Length
A3
Type
0
Programmed
burst length
0
Sequential
1Interleaved
1Single burst
Test mode
A8
A7
Type
0
0
Mode register set
01
Reserved
10
Reserved
11
Reserved
CAS latency
Burst length
A6
A5
A4
Latency
A2
A1
A0
BT = 0
BT = 1
0
0
0
Reserved
0
001
1
0
0
1
1
0
012
2
0
1
0
2
0
104
4
0
1
1
3
0
118
8
1
X
X
Reserved
1
0
0
Reserved
Reserved
1
0
1
Reserved
Reserved
1
1
0
Reserved
Reserved
11
1
Full page
Reserved
Initial address
Sequential
Interleave
A1
A0
0
0
01
23
01
23
0
1
12
30
10
32
1
0
23
01
23
01
1
1
30
12
32
10
Initial address
Sequential
Interleave
A2
A1
A0
0
0
0
0123456701234567
0
0
1
1234567010325476
0
1
0
2345670123016745
0
1
1
3456701232107654
1
0
0
4567012345670123
1
0
1
5670123454761032
1
1
0
6701234567452301
1
1
1
7012345676543210



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