ACE11204A

N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE11204A is the N-Channel enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology. This high-density process is especially tailored to

minimize on-state resistance and provide superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer power management and other battery

powered circuits where high-side switching, low in-line power loss and resistance to transients are

needed.

Features

⚫

⚫

⚫

Exceptional on-resistance and maximum DC current capability

Applications

⚫

Drivers: Relays/Solenoids/Lamps/Hammers

⚫

Power Supply Converter Circuits

⚫

Load/Power Switching Cell Phones, Pagers

Absolute Maximum Ratings

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

0.65

A

0.45

Pulsed Drain Current

1.0

A

Continuous Source Current (Diode Conduction)

0.3

A

Power Dissipation

0.27

W

0.16

Operating Junction Temperature

-55~150

O

C

Storage Temperature Range

-55~150

O

C