AM6594 datasheet(4/8 Pages) AITSEMI

4 / 8 page

AiT Semiconductor Inc.

www.ait-ic.com

AM6594

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

REV1.0

- FEB 2019 RELEASED -

- 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min

Typ.

Max

Units

Static Parameters

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=250μA

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

1.6

2.5

Gate Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

TJ =25°C

μA

VDS=24V,VGS =0V

TJ =75°C

Drain-source On-ResistanceNOTE5

RDS(ON)

VGS =10V,ID=20A

4.5

mΩ

VGS =4.5V,ID=15A

5.6

Forward Transconductance

Gfs

VDS=10V, ID=10A

8.8

Diode Characteristics

Diode Forward VoltageNOTE5

VSD

IS=1A, VGS=0V

1.0

Continuous Source Current

Reverse Recovery Time

trr

IS=10A, dl/dt=100A/μs

Reverse Recovery Charge

Qrr

3.5

Dynamic and Switching Parameters

Total Gate Charge

VDS=15V, VGS=10V,

ID=10A

24.6

33.4

Total Gate Charge (4.5V)

Gate-Source Charge

Qgs

2.8

3.5

Gate-Drain Charge

Qgd

8.1

Input Capacitance

Ciss

VDS=15V, VGS=0V,

f=1.0MHz

1280

Output Capacitance

Coss

196

Reverse Transfer Capacitance

Crss

162

Gate Resistance

VGS=0V, VDS=0V,

f=1MHZ

2.2

Turn-On TimeNOTE5

td(on)

VDD=15V, VGEN=10V,

RG=3.3Ω, ID=1A

6.4

Turn-Off TimeNOTE5

td(off)

32.4

9.2

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