MCP6V51-ESLASHMS datasheet(28/50 Pages) MICROCHIP

28 / 50 page

MCP6V51/2/4

DS20006136B-page 28



2018-2022 Microchip Technology Inc. and its subsidiaries

Figure 4-13 shows a higher performance circuit for a

Wheatstone bridge signal conditioning design. This

example offers a symmetric, high-impedance load to

the bridge with superior CMRR performance. It

maintains this high CMRR by driving the signal

differentially into the ADC.

FIGURE 4-13:

Higher Performance Design.

4.4.3

RTD SENSOR

The ratiometric circuit in Figure 4-14 conditions a

two-wire RTD for applications with a limited

temperature range. U1 acts as a difference amplifier,

with a low-frequency pole. The sensor’s Wiring

Resistance (RW) is corrected in firmware. Failure

(open) of the RTD is detected by an out-of-range

voltage.

FIGURE 4-14:

RTD Sensor.

20 k

1 µF

200

20 k

1 µF

ADC

VDD

200 

3 k

1 µF

R R

VDD

10 nF

200

MCP6V52

10 nF

ADC

+5V

1.0 µF

VDD

RRTD

100Ω

1 kΩ

4.99 kΩ

34.8 kΩ

2 MΩ

10.0 kΩ

MCP6V51

10.0 kΩ

2 MΩ

10 nF

100 nF

–

MCP6V51-E/MS Datasheet(PDF) 28 Page - Microchip Technology

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