PACUSB-U2R datasheet(4/7 Pages) CALMIRCO

4 / 7 page

490 N. McCarthy Blvd., Milpitas, CA 95035-5112

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Tel: 408.263.3214

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Fax: 408.263.7846

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www.cmd.com 05/01/06

PACUSB-U1/U2/U3

Specifications (con’t)

Note 1: ESD applied to input/output/V3.3 pins with respect to GND, one at a time. Clamping voltage is measured at the opposite side

of the EMI filter to the ESD pin (i.e., if ESD is applied to pin 1, then clamping voltage is measured at pin 6). Unused pins are

open.

Note 2: These parameters guaranteed by design.

ELECTRICAL OPERATING CHARACTERISTICS

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Resistance R1 (PACUSB-U1 only)

Measured at TA = 25°C

Resistance R1 (PACUSB-U2 only)

Measured at TA = 25°C

Resistance R1 (PACUSB-U3 only)

Measured at TA = 25°C

Resistance R2

Measured at TA = 25°C

1.2

1.5

1.8

Capacitance C1

Measured at 1 MHz, 2.5VDC,

TA =25°C

ILEAK

Diode Leakage Current to GND

At 3.3VDC and TA = 25°C

100

VD1

Diode Reverse-biased Stand-off

Voltage

I = 10

μA,TA = 25°C

5.5

VD2

Signal Clamp Voltage

Positive Clamp

Negative Clamp

@ 10mA, TA = 25°C

5.6

-1.2

6.8

-0.8

8.0

-0.4

VESD

In-system ESD Withstand Voltage

Human Body Model, MIL-STD-883,

Method 3015

IEC 61000-4-2, contact discharge

method (I/O pins)

IEC 61000-4-2, contact discharge

method (V3.3 pin)

Notes 1,2

±30

±15

±25

VCLAMP

Clamping Voltage during ESD

Discharge

Positive

Negative

MIL-STD-883, Method 3015, 8kV;

Notes 1,2

-5

PACUSB-U2R Datasheet(PDF) 4 Page - California Micro Devices Corp

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