●

●

●

▲

◀

●

●

●

▲

◀

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Drain to Source Voltage

500

V

4.5

A

2.9

A

Drain Current Pulsed

(Note 1)

18

A

Gate to Source Voltage

V

Single Pulsed Avalanche Energy

(Note 2)

390

mJ

Repetitive Avalanche Energy

(Note 1)

7.4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

3.5

V/ns

74

W

Derating Factor above 25 °C

0.59

W/°C

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

°C

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

Thermal Resistance, Junction-to-Case

-

-

1.7

°C/W

Thermal Resistance, Case to Sink

-

0.5

-

°C/W

Thermal Resistance, Junction-to-Ambient

-

-

62

°C/W

SFP830

June, 2003. Rev. 1.

1/7

Features

■

High ruggedness

■

■

Gate Charge (Typical 28nC)

■

Improved dv/dt Capability

■

100% Avalanche Tested

■

Maximum Junction Temperature Range (150°C)

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. This devices is specially well

suited for half bridge and full bridge resonant topolgy like a

electronic lamp ballast.

N-Channel MOSFET

Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

Symbol

2. Drain

3. Source

1. Gate

TO-220

1 2

3