Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

500

-

-

V

Δ

Δ

Breakdown Voltage Temperature

coefficient

-

0.6

-

V/°C

Drain-Source Leakage Current

--

1

uA

--

10

uA

Gate-Source Leakage, Forward

--

100

nA

Gate-source Leakage, Reverse

-

-

-100

nA

On Characteristics

Gate Threshold Voltage

2.0

-

4.0

V

Static Drain-Source On-state Resis-

tance

--

1.5

Ω

Dynamic Characteristics

Input Capacitance

-

800

-

pF

Output Capacitance

-

85

-

Reverse Transfer Capacitance

-

24

-

Dynamic Characteristics

Turn-on Delay Time

※ see fig. 13.

(Note 4, 5)

-

15

40

ns

Rise Time

-

18

46

Turn-off Delay Time

-

82

170

Fall Time

-

20

50

Total Gate Charge

※ see fig. 12.

(Note 4, 5)

-

28

36

nC

Gate-Source Charge

-

4-

Gate-Drain Charge(Miller Charge)

-

12

-

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit.

Continuous Source Current

Integral Reverse p-n Junction

Diode in the MOSFET

--

4.5

A

Pulsed Source Current

-

-

18

Diode Forward Voltage

-

-

1.5

V

Reverse Recovery Time

-

270

-

ns

Reverse Recovery Charge

-

1.7

-

uC

SFP830

1. Repeativity rating : pulse width limited by junction temperature

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

2/7