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ESDA8P30-1T2 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDA8P30-1T2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vpp Peak pulse voltage IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge >30 >30 kV Ppp Peak pulse power (8/20 μs) 300 W Ipp Peak pulse current (8/20 μs) 30 A Top Operating junction temperature range -55 to 150 °C Tstg Storage junction temperature range -55 to 150 °C Figure 1. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage I = Leakage current @V V = Stand-off voltage I = Peak pulse current R BR RM RM RM PP V = Clamping voltage CL D = Dynamic resistance I R = Breakdown current V V V I RM I R I PP V I V Slope = 1/ R d V V CL V BR RM V Table 2. Electrical characteristics (values) (Tamb = 25° C) Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6.9 7.3 7.8 V IRM VRM = 6.3 V 300 nA VCL IPP = 20 A 8/20µs 11 V IPP = 30 A 8/20µs 12 RD 8/20µs 0.12 Ω CLINE VLINE = 0 V, F = 1 MHz, VOSC = 30 mV 170 pF ESDA8P30-1T2 Characteristics DS12517 - Rev 3 page 2/11 |
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