A2

1

2

3

Pin connection

Pin

Connection

1

Gate

2

Drain

3

Source (bottom side)

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L16080CF2

1625 MHz

28 V

80 W

18 dB

57%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally input matched for ease of use

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the European Directive 2002/95/EC

Applications

•

Satellite comms

•

Telecom

•

ISM

Description

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for

global positioning system and communication/ISM applications with frequencies from

1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation

formats.

Product status link

RF2L16080CF2

Product summary

Order code

RF2L16080CF2

Marking

2L16080

Package

A2

Packing

Tape and reel 13"

Base/bulk quantity

120/120

80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor

RF2L16080CF2

Datasheet

DS13222 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com