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A1P35S12M3 Datasheet(PDF) 7 Page - STMicroelectronics

Part # A1P35S12M3
Description  ACEPACKTM 1 sixpack topology, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

A1P35S12M3 Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 7. Switching energy vs gate resistance
IGBT230820171149SLG
7
6
5
4
3
2
1
0
0
20
40
60
80
E
(mJ)
RG (Ω)
VCC = 600 V, VGE = ± 15 V, IC = 35 A
EON (TJ = 150 °C)
EON (TJ = 25 °C)
EOFF (TJ = 150 °C)
EOFF (TJ = 25 °C)
Figure 8. Switching energy vs collector current
IGBT230820171150SLC
5
4
3
2
1
0
5
15
25
35
45
55
65
E
(mJ)
IC (A)
VCC = 600 V, VGE = ± 15 V, RG = 10 Ω
EON (TJ = 150 °C)
EON (TJ = 25 °C)
EOFF (TJ = 150 °C)
EOFF (TJ = 25 °C)
Figure 9. IGBT reverse biased safe operating area
(RBSOA)
IGBT230820171151FSOA
70
60
50
40
30
20
10
0
0
200 400 600 800 1000 1200
IC
(A)
VCE (V)
TJ = 125 °C, VGE = ±15 V, RG = 10 Ω
Figure 10. Diode forward characteristics (terminal)
IGBT230820171154DVF
60
50
40
30
20
10
0
0
1
2
3
4
IF (A)
VF (V)
TJ = 25 °C
TJ = 150 °C
Figure 11. Diode reverse recovery energy vs diode current
slope
IGBT230820171431RRE
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
400
800
1200
1600
Erec
(mJ)
di/dt (A/µs)
VCE = 600 V, IF = 35 A, VGE = ±15 V
TJ = 25 °C
TJ = 150 °C
Figure 12. Diode reverse recovery energy vs forward
current
IGBT230820171157RRE
4.2
3.6
3.0
2.4
1.8
1.2
0.6
5
15
25
35
45
55
65
Erec
(mJ)
IF (A)
TJ = 150 °C
TJ = 25 °C
VCE = 600 V, RG = 10 Ω, VGE = ±15 V
A1P35S12M3
Electrical characteristics (curves)
DS11635 - Rev 5
page 7/15



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