A1P35S12M3 datasheet(8/15 Pages) STMICROELECTRONICS

Part #	A1P35S12M3

Description	ACEPACKTM 1 sixpack topology, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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8 / 15 page

Figure 13. Diode reverse recovery energy vs gate

resistance

IGBT230820171158RRE

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

Erec

(mJ)

RG (Ω)

TJ = 150 °C

TJ = 25 °C

VCE = 600 V, IF = 35 A, VGE = ±15 V

Figure 14. Inverter diode thermal impedance

IGBT230820171500MT

10 0

10 -1

10 -3

10 -2

10 -1

10 0

Zth(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

ri (˚C/W)

0.1372

0.4030

0.2525

0.1034

τi(s)

ri (˚C/W)

0.1497

0.4233

0.7016

0.2714

τi(s)

0.0919

0.4067

0.0009

0.0090

0.0513

0.3253

0.0011

0.0154

RC - Foster thermal network

Figure 15. IGBT thermal impedance

IGBT230820171153MT

10 0

10 -1

10 -3

10 -2

10 -1

10 0

Zth(°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

ri (˚C/W)

0.0619

0.3073 0.1502 0.0784

τi(s)

0.3556

ri (˚C/W)

0.0604

0.3088 0.5759 0.3016

τi(s)

0.0005

0.0152 0.0939 0.3964

0.0005

0.0103 0.0613

RC - Foster thermal network

A1P35S12M3

Electrical characteristics (curves)

DS11635 - Rev 5

page 8/15

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