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A1P50S65M2 Datasheet(PDF) 6 Page - STMicroelectronics

Part # A1P50S65M2
Description  ACEPACKTM 1 sixpack topology, 650 V, 50 A, trench gate field‑stop M series IGBT with soft diode and NTC
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

A1P50S65M2 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Switching energy vs gate resistance
IGBT101020171348SLG
4.0
3.0
2.0
1.0
0
0
20
40
60
80
E
(mJ)
RG (Ω)
VCC = 300 V, IC = 50 A, VGE = ±15 V
EON (TJ = 150 °C)
EOFF (TJ = 150 °C)
EOFF (TJ = 25 °C)
EON (TJ = 25 °C)
Figure 8. Switching energy vs collector current
IGBT101020171351SLC
3
2
1
0
10
30
50
70
90
E
(mJ)
IC (A)
VCC = 300 V, RG = 6.8 Ω, VGE = ±15 V
EOFF (TJ = 150 °C)
EOFF (TJ = 25 °C)
EON (TJ = 150°C)
EON (TJ = 25 °C)
Figure 9. IGBT reverse biased safe operating area
(RBSOA)
IGBT101020171353OC25
50
40
30
20
10
0
0
100 200 300 400 500 600
IC
(A)
VCE (V)
TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω
Figure 10. Diode forward characteristics
IGBT101020171356DVF
80
60
40
20
0
0
0.4
0.8
1.2
1.6
2.0
VF (V)
IF
(A)
TJ = 150 °C
TJ = 25 °C
Figure 11. Diode reverse recovery energy vs diode current
slope
IGBT101020171356OC25
1.2
0.9
0.6
0.3
0
200
750
1300
1850
Erec
(mJ)
di/dt (A/µs)
VCE = 300 V, VGE = ±15 V, IF = 50 A
TJ = 150 °C
TJ = 25 °C
Figure 12. Diode reverse recovery energy vs forward
current
IGBT101020171402RRE
1.6
1.2
0.8
0.4
0
10
30
50
70
90
Erec
(mJ)
IF (A)
VCE = 300 V, VGE = ±15 V, RG = 6.8 Ω
TJ = 150 °C
TJ = 25 °C
A1P50S65M2
Electrical characteristics (curves)
DS12332 - Rev 3
page 6/14



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