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A1P50S65M2 Datasheet(PDF) 7 Page - STMicroelectronics |
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A1P50S65M2 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() Figure 13. Diode reverse recovery energy vs gate resistance IGBT101020171406RRE 1.2 0.9 0.6 0.3 0 0 20 40 60 80 Erec (mJ) RG (Ω) VCE = 300 V, VGE = ±15 V, IF = 50 A TJ = 25 °C TJ = 150 °C Figure 14. Inverter diode thermal impedance IGBT111020170844MT 100 10-1 10-3 10-2 10-1 100 Zth (°C/W) t (s) Zth(typ.)JH Zth(max.)JC JC i 1 2 3 4 ri (˚C/W) 0.1746 0.5169 0.2851 0.1197 τi(s) 0.0008 0.0074 0.0368 0.2601 JH i ri (˚C/W) 0.2091 0.5735 0.7511 0.3615 τi(s) 0.0010 0.0116 0.0729 0.3310 RC - Foster thermal network RC - Foster thermal network 1 2 3 4 Figure 15. IGBT thermal impedance IGBT111020170846MT 10 0 10 -1 10 -3 10 -2 10 -1 10 0 Zth (°C/W) t (s) JC i 1 2 3 4 ri (˚C/W) 0.0718 0.2858 0.2471 0.1130 τi(s) 0.0002 0.0072 0.0392 0.2850 JH i ri (˚C/W) 0.0808 0.3144 0.6701 0.3713 τi(s) 0.0003 0.0113 0.0752 0.3492 Zth(typ.)JH Zth(max.)JC RC - Foster thermal network RC - Foster thermal network 1 2 3 4 A1P50S65M2 Electrical characteristics (curves) DS12332 - Rev 3 page 7/14 |
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