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A2P75S12M3-F Datasheet(PDF) 7 Page - STMicroelectronics

Part # A2P75S12M3-F
Description  ACEPACKTM 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

A2P75S12M3-F Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 7. Switching energy vs gate resistance
IGBT191020171351SLG
14
12
10
8
6
4
2
0
0
10
20
30
40
E
(mJ)
RG (Ω)
VCC = 600 V, IC = 75 A, VGE = ±15 V
EON (TJ =150°C)
EOFF (TJ =25°C)
EON (TJ =25°C)
EOFF (TJ =150°C)
Figure 8. Switching energy vs gate resistance
IGBT191020171351SLG
14
12
10
8
6
4
2
0
0
10
20
30
40
E
(mJ)
RG (Ω)
VCC = 600 V, IC = 75 A, VGE = ±15 V
EON (TJ =150°C)
EOFF (TJ =25°C)
EON (TJ =25°C)
EOFF (TJ =150°C)
Figure 9. IGBT reverse biased safe operating area
(RBSOA)
IGBT191020171358OC175
70
60
50
40
30
20
10
0
0
300
600
900
IC
(A)
VCE (V)
TJ = 125 °C, VGE = ±15 V, RG = 10 Ω
Figure 10. Diode forward characteristics (terminal)
IGBT191020171401DVF
125
100
75
50
25
0
0
1
2
3
4
IF
(A)
VF (V)
TJ = 150 °C
TJ = 25 °C
Figure 11. Diode reverse recovery energy vs diode current
slope
IGBT191020171402RRE
5.5
4.5
3.5
2.5
1.5
0.5
600
1000
1400
1800
Erec
(mJ)
di/dt (A/µs)
VCE = 600 V, VGE = ±15 V, IF = 75 A
TJ = 150 °C
TJ = 25 °C
Figure 12. Diode reverse recovery energy vs forward
current
IGBT191020171408RRE
6
5
4
3
2
1
0
10
30
50
70
90
110 130 150
Erec
(mJ)
IF (A)
VCE = 600 V, VGE = ±15 V, RG = 10 Ω
TJ = 150 °C
TJ = 25 °C
A2P75S12M3-F
Electrical characteristics curves
DS11656 - Rev 5
page 7/14



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