1

Electrical ratings

1.1

IGBT

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

V

IC

Continuous collector current (TC = 100 °C)

75

A

ICP (1)

Pulsed collector current (tp = 1 ms)

150

A

VGE

Gate-emitter voltage

±20

V

PTOT

Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)

454.5

W

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

IC = 1 mA, VGE = 0 V

1200

V

VCE(sat)

(terminal)

Collector-emitter

saturation voltage

VGE = 15 V, IC= 75 A

1.95

2.3

V

VGE = 15 V, IC = 75 A,

TJ = 150 ˚C

2.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current VGE = 0 V, VCE = 1200 V

100

µA

IGES

Gate-emitter leakage

current

VCE = 0 V, VGE = ± 20 V

± 500

nA

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

4700

pF

Coes

Output capacitance

350

pF

Cres

Reverse transfer

capacitance

190

pF

Qg

Total gate charge

VCC = 960 V, IC = 75 A, VGE = ±15 V

350

nC

td(on)

Turn-on delay time

VCC = 600 V, IC = 75 A, RG = 10 Ω,

VGE = ±15 V, di/dt = 1900 A/µs

198

ns

tr

Current rise time

32

ns

Eon (1)

Turn-on switching

energy

3.59

mJ

A2P75S12M3-F

Electrical ratings

DS11656 - Rev 5

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