STS8DN6LF6AG datasheet(1/14 Pages) STMICROELECTRONICS

Part #	STS8DN6LF6AG

Description	Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

PDF	14 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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SO-8

1

4

5

8

D1(7, 8)

G1(2)

S1(1)

D2(5, 6)

G2(4)

S2(3)

SC12820

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STS8DN6LF6AG

60 V

24 mΩ

8 A

3.2 W

•

AEC-Q101 qualified

•

Very low on-resistance

•

Very low gate charge

•

High avalanche ruggedness

•

Low gate drive power loss

•

Logic level

Applications

•

Switching applications

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6

technology with a new trench gate structure. The resulting Power MOSFET exhibits

very low RDS(on) in all packages.

Product status link

STS8DN6LF6AG

Product summary

Order code

STS8DN6LF6AG

Marking

8DN6LF6

Package

SO-8

Packing

Tape and reel

Automotive-grade dual N-channel 60 V, 21 mΩ typ., 8 A STripFET F6

Power MOSFET in a SO-8 package

STS8DN6LF6AG

Datasheet

DS11953 - Rev 2 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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