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STS8DN6LF6AG Datasheet(PDF) 2 Page - STMicroelectronics |
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STS8DN6LF6AG Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 14 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tamb = 25 °C 8 A Drain current (continuous) at Tamb = 100 °C 5.8 IDM(2) Drain current (pulsed) 32 A PTOT Total power dissipation at Tamb = 25 °C (one channel active) 3.2 W Tstg Storage temperature range -55 to 175 °C TJ Operating junction temperature range °C 1. When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s. 2. Pulse width is limited by safe operating area . Table 2. Thermal data Symbol Parameter Value Unit RthJA(1) Thermal resistance, junction-to-ambient 47 °C/W 1. When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit IAV Avalanche current, not repetitive 6 A EAS(1) Single pulse avalanche energy 72 mJ 1. Starting TJ = 25 °C, ID = IAV, VDD = 43.5 V. STS8DN6LF6AG Electrical ratings DS11953 - Rev 2 page 2/14 |
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