STL3N65M2 datasheet(6/13 Pages) STMICROELECTRONICS

Part #	STL3N65M2

Description	N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 13 page

Figure 7. Typical capacitance characteristics

GIPD031120151059CVR

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

V DS (V)

C ISS

C OSS

C RSS

f= 1MHz

Figure 8. Typical output capacitance stored energy

GIPD171220151646EOS

1.2

1.0

0.8

0.6

0.4

0.2

0.0

100 200 300 400 500 600

E OSS

(µJ)

VDS(V)

Figure 9. Normalized gate threshold vs temperature

GIPD031120151102VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

T J(°C)

I D = 250 µA

Figure 10. Normalized on-resistance vs temperature

GIPD031120151106RON

2.2

1.8

1.4

1.0

0.6

0.2

-75

-25

125

R DS(on)

(norm.)

T J(°C)

V GS = 10 V

Figure 11. Normalized breakdown voltage vs temperature

GIPD031120151106BDV

1.08

1.04

1.00

0.96

0.92

0.88

-75

-25

125

V (BR)DSS

(norm.)

T J(°C)

I D = 1 mA

Figure 12. Typical reverse diode forward characteristics

GIPD031120151107SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.8

1.2

1.6

VSD

(V)

ISD (A)

Tj = -50 C

Tj = 25 °C

Tj = 150 °C

STL3N65M2

Electrical characteristics (curves)

DS11065 - Rev 4

page 6/13

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