STL3N65M2 datasheet(2/13 Pages) STMICROELECTRONICS

Part #	STL3N65M2

Description	N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 13 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

2.3

Drain current (continuous) at TC = 100 °C

1.45

Drain current (continuous) at TA = 25 °C

0.7

Drain current (continuous) at TA = 100 °C

0.43

IDM (1)

Drain current pulsed

2.8

PTOT

Total power dissipation at TA = 25 °C

Total power dissipation at TC = 25 °C

IAS

Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)

0.3

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V)

275

dv/dt(2)

Peak diode recovery voltage slope

V/ns

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

°C

1. Pulse width is limited by safe operating area.

2. ISD ≤ 2.3 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

5.6

°C/W

RthJA(1)

Thermal resistance, junction-to-ambient

62.5

°C/W

1. When mounted on an 1-inch² FR-4, 2 Oz copper board, t < 10 s.

STL3N65M2

Electrical ratings

DS11065 - Rev 4

page 2/13

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