| Electronic Components Datasheet Search |
|
STP12N65M2 Datasheet(PDF) 7 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP12N65M2 Datasheet(HTML) 7 Page - STMicroelectronics |
|
7 / 13 page ![]() STP12N65M2 Electrical characteristics DocID031324 Rev 1 7/13 Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Output capacitance stored energy Figure 13: Source-drain diode forward characteristics GIPD161220141823MT C 10 1 0.1 1 100 VDS(V) 10 (pF) 0.1 100 1000 Ciss Coss Crss VGS(th) 0.8 -75 -25 25 Tj(°C) (norm) 0.6 75 0.7 0.9 1.0 125 1.1 ID = 250 µ A GIPD180920141442FSR V(BR)DSS 0.96 -75 -25 75 Tj(°C) 25 (norm) 0.88 125 0.92 1.00 1.04 1.08 ID= 1m A GIPD180920141448FSR E 1 0 100 300 VDS(V) 200 (µJ) 0 400 500 600 2 3 4 GIPD171220141020MT GIPD161220141847MT VSD 0.7 0 2 6 ISD(A) 4 (V) 0.5 8 0.6 0.8 0.9 Tj= 150°C Tj= -50°C Tj= 25°C 1 1.1 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |