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STP12N65M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP12N65M2 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() November 2017 DocID031324 Rev 1 1/13 This is information on a product in full production. www.st.com STP12N65M2 N- channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STP12N65M2 650 V 0.50 Ω 8 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STP12N65M2 12N65M2 TO-220 Tube 1 2 3 TO-220 TAB |
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Similar Description - STP12N65M2 |
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