STF16N60M6 datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

STF16N60M6

Electrical ratings

DocID030461 Rev 1

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tc = 25 °C

12(1)

Drain current (continuous) at Tc = 100 °C

7.6(1)

IDM

Drain current (pulsed)

32(1)(2)

PTOT

Total dissipation at Tc = 25 °C

dv/dt(3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2.5

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

(1) Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 12 A, di/dt ≤ 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V

(4) VDS ≤ 480 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

2.5

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)

110

STF16N60M6 Datasheet(PDF) 3 Page - STMicroelectronics

STF16N60M6 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL