STP85NF55_V01 datasheet(3/18 Pages) STMICROELECTRONICS

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Electrical characteristics

TCASE = 25 °C unless otherwise specified

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 250 μA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 55 V

µA

VGS = 0 V, VDS= 55 V

TC = 125 °C (1)

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 40 A

6.2

8.0

mΩ

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward transconductance

VDS = 15 V, ID = 40 A

120

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

3700

Coss

Output capacitance

900

Crss

Reverse transfer capacitance

310

Total gate charge

VDD = 30 V, ID = 80 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

120

150

Qgs

Gate-source charge

Qgd

Gate-drain charge

1. Pulsed: pulse duration=300 μs, duty cycle 1.5%

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

Rise time

100

td(off)

Turn-off delay time

Fall time

STB85NF55T4, STP85NF55

Electrical characteristics

DS2569 - Rev 12

page 3/18

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