| Electronic Components Datasheet Search |
|
STP85NF55 Datasheet(PDF) 4 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP85NF55 Datasheet(HTML) 4 Page - STMicroelectronics |
|
4 / 18 page ![]() Table 6. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD = 80 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 75 ns Qrr Reverse recovery charge - 210 nC IRRM Reverse recovery current - 5.5 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% STB85NF55T4, STP85NF55 Electrical characteristics DS2569 - Rev 12 page 4/18 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |