1

2

3

TO-220

TAB

1

2

3

TO-220FP

1

3

TAB

D2PAK

DPAK

1

3

2

TAB

1 2

3

TAB

I2PAK

AM01475v1_noZen

D(2, TAB)

G(1)

S(3)

Features

Order codes

VDS

RDS(on) max.

ID

Package

STB100N10F7

100 V

8.0 mΩ

80 A

D2PAK

STD100N10F7

80 A

DPAK

STF100N10F7

45 A

TO-220FP

STI100N10F7

80 A

I2PAK

STP100N10F7

80 A

TO-220

•

Among the lowest RDS(on) on the market

•

Excellent FoM (figure of merit)

•

Low Crss/Ciss ratio for EMI immunity

•

High avalanche ruggedness

Applications

•

Switching applications

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an

enhanced trench gate structure that results in very low on-state resistance, while also

reducing internal capacitance and gate charge for faster and more efficient switching.

Product status links

STB100N10F7

STD100N10F7

STF100N10F7

STI100N10F7

STP100N10F7

N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs

in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

STB100N10F7, STD100N10F7, STF100N10F7

STI100N10F7, STP100N10F7

Datasheet

DS9291 - Rev 5 - June 2018

For further information contact your local STMicroelectronics sales office.

www.st.com