STF100N10F7 datasheet(3/28 Pages) STMICROELECTRONICS

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Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On-/off-states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 250 μA, VGS = 0 V

100

IDSS

Zero gate voltage drain current

VDS = 100 V, VGS = 0 V

µA

VDS = 100 V, VGS = 0 V,

TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

2.5

4.5

RDS(on)

Static drain-source on-resistance

For D2PAK, DPAK, I2PAK and

TO-220:

VGS = 10 V, ID = 40 A

For TO-220FP:

VGS = 10 V, ID = 22.5 A

6.8

8.0

mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0 V

4369

Coss

Output capacitance

823

Crss

Reverse transfer capacitance

Total gate charge

VDD = 50 V, ID = 80 A,

VGS = 0 to 10 V

(see Figure 17. Test circuit for gate

charge behavior)

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16. Test circuit for

resistive load switching times and

Figure 21. Switching time

waveform)

Rise time

td(off)

Turn-off delay time

Fall time

STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7

Electrical characteristics

DS9291 - Rev 5

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