MS2267

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DESCRIPTION:

DESCRIPTION:

The MS2267 is a high power Class C NPN transistor

specifically designed for TACAN/DME applications.

This device is capable of operation under moderate pulse

width and duty cycles. Low thermal resistance and

computerized automatic wire bonding techniques ensure

high reliability and product consistency.

The MS2267 utilizes an emitter ballasted die geometry

capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

≤≤ 90°°C)

575

W

Device Current*

20

A

Vcc

Collector-Supply Voltage*

50

V

Junction Temperature (Pulsed RF Operation)

250

°°C

Storage Temperature

-65 to +200

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

0.28

°°C/W

* Applies only to rated RF amplifier operation

Features

Features

• 960 – 1215MHz

• 50 VOLTS

• 5:1 VSWR CAPABILITY @ RATED CONDITIONS

• INPUT/OUTPUT MATCHING

• P

• G

•• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855