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PJS6421 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJS6421 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PPJS6421 January 6,2022 PJS6421-REV.01 Page 1 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -7.4 A SOT-23 6L-1 Unit : inch(mm) Features RDS(ON), VGS@-4.5V, ID@-5A<26m Ω RDS(ON), VGS@-2.5V, ID@-4A<32m Ω RDS(ON), VGS@-1.8V, ID@-3A<40m Ω Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case : SOT-23 6L-1 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0005 ounces, 0.014 grams PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS +10 Continuous Drain Current(Note 4) ID -7.4 A Pulsed Drain Current(Note 1) IDM -29.6 Power Dissipation Ta=25oC PD 2 W Derate above 25oC 16 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal Resistance - Junction to Ambient(Note 3,4) RθJA 62.5 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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