N1N20 datasheet(1/12 Pages) STMICROELECTRONICS

Part #	N1N20

Description	N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 12 page

June 2011

Doc ID 6772 Rev 3

1/12

12

STN1N20

N-channel 200 V, 1.2

Ω, 1 A, SOT-223

MESH OVERLAY™ Power MOSFET

Features

■ 100% avalanche tested

Application

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using the latest high voltage MESH

OVERLAY™ process. The new patented STrip

layout coupled with the company’s proprietary

edge termination structure, makes it suitable in

converters for lighting applications.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on) max

ID

STN1N20

200 V

< 1.5

Ω

1 A

SOT-223

1

2

4

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STN1N20

N1N20

SOT-223

Tape and reel

www.st.com

Obsolete

Product(s)

- Obsolete

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