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N1N20 Datasheet(PDF) 3 Page - STMicroelectronics |
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N1N20 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STN1N20 Electrical ratings Doc ID 6772 Rev 3 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS =0) 200 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 1 A ID Drain current (continuous) at TC = 100 °C 0.6 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 4 A PTOT Total dissipation at TC = 25 °C 2.9 W Derating factor 0.023 W/°C dv/dt Peak diode recovery voltage slope 6 V/ns Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb Thermal resistance junction-pcb max 43 °C/W Rthj-amb Thermal resistance junction-ambient max 60 °C/W Tl Maximum lead temperature for soldering purpose 260 °C Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 1A EAS Single pulse avalanche energy (1) 1. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 10 mJ Obsolete Product(s) - Obsolete Product(s) |
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