M58LR128FT datasheet(66/82 Pages) STMICROELECTRONICS

66 / 82 page

M58LR128FT, M58LR128FB

66/82

Note: 1. The variable P is a pointer which is defined at CFI offset 15h.

2. Bank Regions. There are two Bank Regions, There are two Bank Regions, see Table 29. and Table 30.

Table 40. Bank and Erase Block Region 2 Information

(P+32)h = 13Ch

06h

Bank Region 1 Erase Block Type 2 Information

Bits 0-15: n+1 = number of identical-sized erase blocks

Bits 16-31: n×256 = number of bytes in erase block region

(P+33)h = 13Dh

00h

(P+34)h = 13Eh

00h

(P+35)h = 13Fh

02h

(P+36)h = 140h

64h

Bank Region 1 (Erase Block Type 2)

Minimum block erase cycles × 1000

(P+37)h = 141h

00h

(P+38)h = 142h

02h

Bank Regions 1 (Erase Block Type 2): BIts per cell, internal

ECC

Bits 0-3: bits per cell in erase region

Bit 4: reserved for “internal ECC used”

BIts 5-7: reserved

(P+39)h = 143h

03h

Bank Region 1 (Erase Block Type 2): Page mode and

Synchronous mode capabilities

Bit 0: Page-mode reads permitted

Bit 1: Synchronous reads permitted

Bit 2: Synchronous writes permitted

Bits 3-7: reserved

Flash memory (top)

Flash memory (bottom)

Description

Offset

Data

Offset

Data

(P+32)h = 13Ch

01h

(P+3A)h = 144h

0Fh

Number of identical banks within Bank Region 2

(P+33)h = 13Dh

00h

(P+3B)h = 145h

00h

(P+34)h = 13Eh

11h

(P+3C)h = 146h

11h

Number of program or erase operations allowed in Bank

Region 2:

Bits 0-3: Number of simultaneous program operations

Bits 4-7: Number of simultaneous erase operations

(P+35)h = 13Fh

00h

(P+3D)h = 147h

00h

Number of program or erase operations allowed in other

banks while a bank in this region is programming

Bits 0-3: Number of simultaneous program operations

Bits 4-7: Number of simultaneous erase operations

(P+36)h = 140h

00h

(P+3E)h = 148h

00h

Number of program or erase operations allowed in other

banks while a bank in this region is erasing

Bits 0-3: Number of simultaneous program operations

Bits 4-7: Number of simultaneous erase operations

(P+37)h = 141h

02h

(P+3F)h = 149h

01h

Types of erase block regions in Bank Region 2

n = number of erase block regions with contiguous same-size

erase blocks.

Symmetrically blocked banks have one blocking region.(2)

(P+38)h = 142h

06h

(P+40)h = 14Ah

77h

Bank Region 2 Erase Block Type 1 Information

Bits 0-15: n+1 = number of identical-sized erase blocks

Bits 16-31: n×256 = number of bytes in erase block region

(P+39)h = 143h

00h

(P+41)h = 14Bh

00h

(P+3A)h = 144h

00h

(P+42)h = 14Ch

00h

(P+3B)h = 145h

02h

(P+43)h = 14Dh

02h

Flash memory (top)

Flash memory (bottom)

Description

Offset

Data

Offset

Data

M58LR128FT Datasheet(PDF) 66 Page - STMicroelectronics

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