©

1995

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET

SILICON TRANSISTOR

2SC5183R

Document No. TC-2520

(O. D. No. TC-8076)

Date Published April 1995 P

Printed in Japan

FEATURES

• Low noise

NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

• 4-pin Mini-Mold package

SOT-143 style (Pins for overseas use are assigned to the 2SC5183.)

ORDERING INFORMATION

PART NUMBER

QUANTITY

ARRANGEMENT

2SC5183R-T1

3000 units/reel

Embossed tape, 8 mm wide, pins

No. 3 (emitter) and No. 4 (base)

facing the perforations

2SC5183R-T2

3000 units/reel

Embossed tape, 8 mm wide, pins

No. 1 (emitter) and No. 2 (collector)

facing the perforations

Remark Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector-to-base voltage

VCBO

5V

Collector-to-emitter voltage

VCEO

3V

Emitter-to-base voltage

VEBO

2V

Collector current

IC

30

mA

Total power dissipation

PT

90

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–65 to +150

°C

This transistor uses high-frequency technology. Be careful not to allow excessive

current to flow through the transistor, including static electricity.

Electrode assignment

1. Emitter

2. Collector

3. Emitter

4. Base

PACKAGE DRAWINGS

(Units: mm)

2.8

+0.2

–0.3

1.5

+0.2

–0.1

5˚

5˚

5˚

5˚